JPH0810202Y2 - 半導体装置用軽量基板 - Google Patents
半導体装置用軽量基板Info
- Publication number
- JPH0810202Y2 JPH0810202Y2 JP11858889U JP11858889U JPH0810202Y2 JP H0810202 Y2 JPH0810202 Y2 JP H0810202Y2 JP 11858889 U JP11858889 U JP 11858889U JP 11858889 U JP11858889 U JP 11858889U JP H0810202 Y2 JPH0810202 Y2 JP H0810202Y2
- Authority
- JP
- Japan
- Prior art keywords
- plate material
- alloy
- thin plate
- heat sink
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 title claims description 22
- 239000004065 semiconductor Substances 0.000 title claims description 14
- 239000000463 material Substances 0.000 claims description 47
- 229910045601 alloy Inorganic materials 0.000 claims description 9
- 238000005219 brazing Methods 0.000 claims description 8
- 239000000956 alloy Substances 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 229910000838 Al alloy Inorganic materials 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- 238000007747 plating Methods 0.000 claims description 4
- 229910021364 Al-Si alloy Inorganic materials 0.000 claims description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 2
- 238000010030 laminating Methods 0.000 claims 1
- 239000010949 copper Substances 0.000 description 14
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 229910000679 solder Inorganic materials 0.000 description 4
- 238000005476 soldering Methods 0.000 description 4
- 229910018459 Al—Ge Inorganic materials 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000011888 foil Substances 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 239000007791 liquid phase Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910000927 Ge alloy Inorganic materials 0.000 description 2
- 229910000676 Si alloy Inorganic materials 0.000 description 2
- 229910001128 Sn alloy Inorganic materials 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000013585 weight reducing agent Substances 0.000 description 2
- 229910018125 Al-Si Inorganic materials 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- 229910018520 Al—Si Inorganic materials 0.000 description 1
- 229910000599 Cr alloy Inorganic materials 0.000 description 1
- 229910000914 Mn alloy Inorganic materials 0.000 description 1
- 229910020220 Pb—Sn Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- LBJNMUFDOHXDFG-UHFFFAOYSA-N copper;hydrate Chemical compound O.[Cu].[Cu] LBJNMUFDOHXDFG-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11858889U JPH0810202Y2 (ja) | 1989-10-09 | 1989-10-09 | 半導体装置用軽量基板 |
| DE69034139T DE69034139T2 (de) | 1989-10-09 | 1990-10-08 | Keramiksubstrat zur Herstellung elektrischer oder elektronischer Schaltungen |
| DE69033718T DE69033718T2 (de) | 1989-10-09 | 1990-10-08 | Keramisches Substrat angewendet zum Herstellen einer elektrischen oder elektronischen Schaltung |
| KR1019900015989A KR0173782B1 (ko) | 1989-10-09 | 1990-10-08 | 전기 또는 전자회로의 성형에 사용되는 세라믹기판 |
| EP90119255A EP0422558B1 (en) | 1989-10-09 | 1990-10-08 | Ceramic substrate used for fabricating electric or electronic circuit |
| EP00104809A EP1020914B1 (en) | 1989-10-09 | 1990-10-08 | Ceramic substrate used for fabricating electric or electronic circuit |
| US07/594,596 US5130498A (en) | 1989-10-09 | 1990-10-09 | Ceramic substrate used for fabricating electric or electronic circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11858889U JPH0810202Y2 (ja) | 1989-10-09 | 1989-10-09 | 半導体装置用軽量基板 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0357945U JPH0357945U (en]) | 1991-06-05 |
| JPH0810202Y2 true JPH0810202Y2 (ja) | 1996-03-27 |
Family
ID=14740302
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11858889U Expired - Lifetime JPH0810202Y2 (ja) | 1989-10-09 | 1989-10-09 | 半導体装置用軽量基板 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0810202Y2 (en]) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003037231A (ja) * | 2001-07-23 | 2003-02-07 | Ibiden Co Ltd | モジュール用基板 |
| JP2003060137A (ja) * | 2001-08-08 | 2003-02-28 | Ibiden Co Ltd | モジュール用基板 |
| JP2003060136A (ja) * | 2001-08-08 | 2003-02-28 | Ibiden Co Ltd | モジュール用基板 |
| JP2011233735A (ja) * | 2010-04-28 | 2011-11-17 | Showa Denko Kk | 絶縁回路基板およびその製造方法、パワーモジュール用ベースおよびその製造方法 |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4756200B2 (ja) | 2000-09-04 | 2011-08-24 | Ｄｏｗａメタルテック株式会社 | 金属セラミックス回路基板 |
| JP5664254B2 (ja) * | 2011-01-14 | 2015-02-04 | 三菱マテリアル株式会社 | パワーモジュール用基板の製造方法及びろう材箔の接合装置 |
| JP5764342B2 (ja) * | 2011-02-10 | 2015-08-19 | 昭和電工株式会社 | 絶縁回路基板、ならびにパワーモジュール用ベースおよびその製造方法 |
| JP5861935B2 (ja) * | 2011-04-11 | 2016-02-16 | 日立金属株式会社 | セラミックス回路基板の検査方法 |
-
1989
- 1989-10-09 JP JP11858889U patent/JPH0810202Y2/ja not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003037231A (ja) * | 2001-07-23 | 2003-02-07 | Ibiden Co Ltd | モジュール用基板 |
| JP2003060137A (ja) * | 2001-08-08 | 2003-02-28 | Ibiden Co Ltd | モジュール用基板 |
| JP2003060136A (ja) * | 2001-08-08 | 2003-02-28 | Ibiden Co Ltd | モジュール用基板 |
| JP2011233735A (ja) * | 2010-04-28 | 2011-11-17 | Showa Denko Kk | 絶縁回路基板およびその製造方法、パワーモジュール用ベースおよびその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0357945U (en]) | 1991-06-05 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |